Improving InP Device Production.

InP fabrication requires air temperature of ±0.01 °C, if:

• Producing next-generation photonic ICs (WDM, QPICs, or co-packaged optics).
  -Performing sub-50 nm overlay lithography or nano-bonding.
  - Packaging or testing narrow-line width or tunable laser arrays.

Improved performance across several key InP production domains

Metric ±0.5 °C ±0.1 °C ±0.01 °C

Overlay Drift ~100 nm ~60 nm ~30 nm—improved registration.

Photonic Coupling Loss ~1.0 dB ~0.5 dB ~0.2 dB—tighter alignment
of waveguides or lenses.

Resonator Drift ~10 pm/hr ~5 pm/hr ~1 pm/hr–better laser/modulator. (Wavelength) locking.

Stage Drift ~40 nm/hr ~20 nm/hr. ~5 nm/hr,more stable,
metrology, probing, and bonding.

1 Sources for the above information.